Ion-beam sputtering
Ion-beam sputtering (IBS) is a method in which the target is external to the ion source. A source can work without any magnetic field like in a hot filament ionization gauge. In a Kaufman source ions are generated by collisions with electrons that are confined by a magnetic field as in a magnetron. They are then accelerated by the electric field emanating from a grid toward a target. As the ions leave the source they are neutralized by electrons from a second external filament. IBS has an advantage in that the energy and flux of ions can be controlled independently. Since the flux that strikes the target is composed of neutral atoms, either insulating or conducting targets can be sputtered.
Recently Posted
-
Ion-assisted deposition
May 31, 2017Ion-assisted deposition http://www.pvd-metallizer.com In ion-assisted deposition (IAD), the substrate is exposed to a se
Read More -
Reactive sputtering
May 31, 2017Reactive sputtering http://www.pvd-metallizer.com In reactive sputtering, the sputtered particles undergo a chemical rea
Read More -
Types of sputter deposition
May 31, 2017Types of sputter deposition http://www.pvd-metallizer.com Sputtering sources often employ magnetrons that util
Read More -
Sputter coating
May 31, 2017Sputter coatinghttp://www.pvd-metallizer.com Sputter coating in scanning electron microscopy is a sputter depositio
Read More